Pattern inspection method and apparatus using electron beam

ABSTRACT

In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult.  
     For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a substrate manufacturingapparatus including circuit patterns such as semiconductor devices andliquid crystal and particularly to the technique for inspecting thepatterns of substrate in the course of the manufacture using SEM.

[0002] A pattern inspecting apparatus using the electron beam of therelated art is described, for example, in the official gazette ofJapanese Laid-Open Patent Application No. 258703/1993. An example of thepattern inspection apparatus using electron beam described in the abovecited reference is illustrated in FIG. 1. An electron beam 2 emittedfrom an electron beam source 1 is deflected with a deflector 3 in the Xdirection, this electron beam irradiates an object substrate 5 via anobjective lens 4, the secondary electron 7 (including the secondaryelectron and reflected electron generated from a sample throughirradiation of the primary electron beam) emitted from the objectsubstrate 5 is simultaneously deflected with an E×B deflector(hereinafter referred to as only E×B) 13 while a stage 6 is continuouslymoved in the Y direction, this secondary electron beam 7 is detectedwith a detector 8 as an electric signal and it is then amplified with apre-amplifier 14, thereafter the detected signal is A/D-converted withan A/D converter 9 to obtain a digital image, this image is thencompared with a digital image at the area which may be expected as to beidentical in an image processing circuit 10, thereby an area generatinga difference is detected as a pattern defect 11 to identify thedefective area. The object substrate 5 is kept at a negative potentialwith the retarding voltage and therefore an acceleration voltage caneasily be changed on the object substrate 5 by changing the retardingvoltage 12.

[0003] In the apparatus of the related art as illustrated in FIG. 1, thesecondary electron 7 has been detected with convergence to one detector8. However, a degree of convergence of the secondary electron isrestricted with various conditions. As the restricting conditions, it ispossible to consider (1) degree of freedom of the electro-optical system(retarding voltage, current of primary beam, electric field of the areanear the sample, etc. for controlling the acceleration voltage of theprimary electron incident to the sample), (2) deflection of the electronbeam 2 with the deflector 3 for scanning the sample, (3) allowance ofsetting, (4) contamination of surface of the detector 7 generated withcollision of electron beam and (5) various aberrations in theelectro-optical system, or the like.

[0004] Although depending on the practical design of the electro-opticalsystem, the conditions (4) and (5) contribute to the degree ofconvergence of secondary electron and the minimum degree may beestimated as about 1 mm under the condition of the electro-opticalsystem, that is, under the condition that the retarding voltage, currentof primary beam and field at the area near the sample which control theacceleration voltage of the primary electron incident to the sample isfixed to only one condition. Moreover, the influence on the degree (2)of convergence of the secondary electron due to the scanning of thedeflector 3 with the electron beam 2 appears as the movement of theconverging position of about 0.5 mm, although depending on the scanningwidth and magnifying factor for the secondary electron. Moreover, inregard to the degree of freedom (1) of the optical system, a degree ofconvergence is changed for about 1 mm by the defocusing, althoughdepending on the other conditions, when the retarding voltage 12, forexample, is changed.

[0005] Moreover, in actual, since the optical axis of the secondaryelectron optical system is deviated, it can be estimated that theconverging position is shifted by about 0.5 mm. When these factors areadded, the diameter of about 3 mm is required for the effective lightreceiving surface of the detector to detect the secondary electron andwhen the allowance of setting (3) is considered, the diameter of 4 mmwill be required for the effective light receiving surface of thephotosensor.

[0006] Meanwhile, the frequency characteristic of detector is inverselyproportional to the area of the detector. For example, in the case ofthe detector having the diameter of 4 mm, the cut-off frequency is only75 MHz even when the design condition and operating condition areimproved. On the other hand, when the diameter of detector is set to 2mm, the cut-off frequency becomes about 150 MHz. However, as explainedabove, since the detector of the related art requires a diameter of 4mm, response is possible only for 15 Msps (sps: sample per second) ofthe sampling frequency corresponding to the cut-off frequency of 75 MHzand it has been impossible to respond to the higher frequency.

SUMMARY OF THE INVENTION

[0007] The present invention can provide an inspection apparatus usingSEM which can sufficient detect the secondary electron even at thesampling frequency higher than 150 Msps which has been difficult in thestructure of the related art to sufficiently cover the detection ofsecondary electron.

[0008] The first means for embodying the present invention isillustrated in FIG. 2.

[0009] Here, the structure for solving the problems will be explained,for easier understanding, for detection at the 400 Msps rate under theassumption that a size of detector is 4 mm square (in above example, thediameter is set to 4 mm, but here the detector has the size of 4 mmsquare), cut-off frequency is 75 MHz and the cut-off frequency isinversely proportional to only the area. Of course, the numerical valuesalso change depending on the internal structure and material of sensor,but these are not explained here. The contents explained above is theessential factors for the case where the target of speed is set to 400Msps or more. Moreover, the number of detectors is set, for example, tofour, but it is selected as the typical value of a plurality ofdetectors and the present invention is never limited only to thenumerical value 4.

[0010] The first means is composed of an electron source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for the scanning and positioning, E×B13 for deflecting the secondary electron 7 emitted from the objectsubstrate 5, a 4-split detector 20 of 2 mm square each for detecting thesecondary electron 7 deflected with the E×B 13, preamplifiers 21 a to 21d having the bandwidth of 200 MHz or higher connected to each detector,an A/D converter 22 of 400 Msps for adding and A/D-converts outputs ofthe preamplifiers 21 a to 21 d to obtain the digital image and an imageprocessing circuit 10 for detecting, from the digital image, an areagenerating difference as a defect 11 through comparison with the digitalimage of the area intrinsically providing expectation for the matchingof images.

[0011] In above structure, the electron beam 2 from the electron source1 is deflected in the X direction with the deflector 3, this electronbeam 2 irradiates the object substrate 5 via the object lens 4, thesecondary electron 7 from the object substrate 5 is bent with E×B 13 fordetection with the 4-split detector 20 while the stage 6 is continuouslymoved in the Y direction, the signal is A/D-converted to obtain thedigital image after the signal of each split detector into voltage withthe preamplifiers 21 a to 21 d and the signals are added with the A/Dconverter and the image processing circuit 10 detects the areagenerating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation for thematching of images. In this case, the secondary electron 7 can beexpanded only to the maximum area of 4 mm square even when change ofretarding voltage 12 and deflection with the deflector 3 are considered.

[0012] Since the 4-split detector 20 is completed in 4 mm square withfour detectors, while one detector is completed in 2 mm square, thesecondary electron 7 enters any one of the sensors. The signal of anydetector is received with the preamplifiers 21 a to 21 d and thesesignals are added in the A/D converter 22 to A/D-convert all secondaryelectrons 7. Since each detector is completed in the 2 mm square, thecut-off frequency is set to 300 MHz, bandwidth of the preamplifier isset to 200 MHz and A/D converter is set to 400 Msps, the detector,preamplifier and A/D converter are designed to cover 400 Msps andsufficient consideration is taken for 400 Msps.

[0013] When a 6-split or 8-split and moreover 12-split detector is usedin place of the 4-split detector to provide the structure to detect thesecondary electron, area of each detector can further be reduced andmoreover it is now possible to further quickly detect the secondaryelectron than 400 Msps explained above.

[0014] Next, the second means for embodying the present invention isillustrated in FIG. 3 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or positioning, E×B 13for bending the secondary electron 7 from the object substrate 5, asecondary electron deflector 30 for deflecting the secondary electron 7bent with E×B 13, 4-split detectors 31 a to 31 d each of which has the 4mm square size for detecting the secondary electron or the likedeflected with the secondary electron deflector 30, preamplifiers 32 ato 32 d of 50 MHz bandwidth connected to each detector, A/D converters33 a to 33 d of 100 Msps for converting the outputs of preamplifiers 32a to 32 d to the digital image and an image processing circuit 10 fordetecting, from the digital image, an area generating difference as thedefect 11 through comparison with the digital image of the areaproviding expectation for the matching of images.

[0015] With introduction of such structure, the electron beam 2 from theelectron beam source 1 is deflected in the X direction with thedeflector 3 to irradiate the object substrate 5 via the objective lens4, the secondary electron 7 from the object substrate 5 is bent with E×B13 while the stage 6 is simultaneously moved continuously in the Ydirection, thereafter the secondary electron deflector 30 is driven with100 MHz to sequentially scan each detector of the 4-split detector 20for detection with the 4-split detector 31, the signal obtained is thenamplified with the preamplifiers 32 a to 32 d and the signal of eachsplit detector is converted to the voltage, the signal is thenA/D-converted to the digital image signal with the A/D converters 33 ato 33 d and the image processing circuit 10 compares the digital imagewith that of the area intrinsically providing the expectation formatching of the image and detects the area generating difference as thedefect 11. In this case, the secondary electron 7 can be spread inmaximum to the area of 4 mm square even when considering, for example,the change of retarding voltage 12 and deflection by the deflector 3.

[0016] Since each 4-split sensor has the size of 4 mm square, thesecondary electron 7 is all incident to the detector selected with thesecondary electron deflector 30. The signal of any detector is receivedwith the pre-amplifiers 32 a to 32 d and these signals are thenA/D-converted with the A/D converters 33 a to 33 d. The detector has asize of 4 mm square, cut-off frequency is 75 MHz, bandwidth ofpreamplifier is 50 MHz and the A/D converter has 100 Msps. Therefore,the detector, preamplifier and A/D converter is responsible to 100 Mspsand moreover the sampling is conducted once for four pixels at 100 Msps.Accordingly, sufficient consideration for 400 Msps can be made with thetotal function of pairing of four detectors, preamplifiers and A/Dconverters.

[0017] Operations of the secondary electron deflector 30 will beexplained in detail with reference to FIG. 10. The secondary electrondeflector 30 is switched, in units of 2.5 ns, in the sequence of a, b,c, d with the period of 100 MHz. The A/D converter 33 samples the signalin the 10 ns period and 100 Msps and obtains in total 400 Msps bysequentially arranging the outputs of the four A/D converters.

[0018] Operating method of the secondary electron deflector 30 will beexplained with reference to FIG. 11. The circle scanning 92 forcontinuously moving the secondary electron 7 on the detecting surfacesof the 4-split detectors 31 a to 31 d can be realized by definingrespectively the X/Y deflection signals as sin/cos signals. Moreover,the switching scanning 93 for discretely scanning the secondary electron7 on the detecting surfaces of the 4-split detectors 31 a to 31 d canalso be realized by defining the X/Y deflection signals as the squarewaves of 10 ns period resulting in the deviation of phase of 90 degrees.In addition, although not illustrated, the similar signals can also beobtained by defining the X/Y deflection signal as the square waves of 10ns and 5 ns periods.

[0019] The third means for embodying the present invention isillustrated in FIG. 4 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or positioning, an E×B 13for bending the secondary electron 7 from the object substrate 5, a4-split smart detector 40 each of which has a size of 2 mm squareintegrating a preamplifier and an adder for detecting the secondaryelectron 7 bent with the E×B 13, an A/D converter 41 of 400 Msps forconverting an output of the 4-split smart detector 40 into a digitalimage and an image processing circuit 10 for detecting, from the digitalimage, the area generating difference as the defect 11 throughcomparison with the digital image of the area intrinsically providingexpectation for matching of images.

[0020] With introduction of this structure, the electron beam 2 from theelectron beam source 1 is deflected in the X direction with thedeflector 3 to irradiate the object substrate 5 via the objective lens4, the secondary electron 7 from the object substrate 5 is bent with theE×B 13 while simultaneously moving the stage 6 in the Y directioncontinuously, thereafter the electron beam 7 is then detected with thesmart detector 40 and A/D-converted into the digital image with the A/Dconverter 41 and the image processing circuit 10 detects, from thedigital image, the area generating difference as the defect 11 throughcomparison with the digital image of the area intrinsically providingthe expectation for matching of images.

[0021] In this case, the secondary electron 7 can be spread in maximumup to the area in size of 4 mm square even when considering the changeof retarding voltage 12 and deflection with the deflector 3. Since one4-split sensor as the size of 2 mm square and the four sensors also havethe size of 2 mm square, the electron beam is incident to any one of thefour sensors. The signal of any detector is received with a preamplifierprovided to each sensor built in the smart detector 40 and the signal ofall secondary electrons 7 can be obtained as the output of the smartdetector 40 by adding such signals from the detector. When the bandwidthof the preamplifier built in the smart detector 40 is set to 200 MHz,since the detector has the size of 2 mm square, the cut-off frequency is300 MHz and A/D converter has 400 Msps, the detector, preamplifier andA/D converter are responsible to 400 Msps because of sufficientconsideration for 400 Msps.

[0022] The fourth means for embodying the present invention isillustrated in FIG. 5 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or position, a E×B 13 forbending the secondary electron 7 from the object substrate 5, aconverging optical system 51 for converging the secondary electron 7bent with the E×B 13, a detector 8 of 2 mm square for detecting thesecondary electron 7 converged with the converging optical system 51, apreamplifier 52 having the bandwidth of 200 MHz or more connected to thedetector, an A/D converter 9 of 400 Msps for converting an output of thepreamplifier 52 to the digital image through the A/D conversion and animage processing circuit 10 for detecting, from the digital image, thearea generating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation formatching of images.

[0023] With introduction of the structure explained above, the electronbeam 2 from the electron beam source 1 is deflected in the X directionwith the deflector 3 to irradiate the object substrate 5 via theobjective lens 4, the secondary electron 7 from the object substrate 5is bent with the E×B 13 having optimized the bending angle for eachretarding voltage while simultaneously moving continuously the stage 6in the Y direction, thereafter the secondary electron 7 converged to theposition depending on the retarding voltage with the converging opticalsystem 51 is detected with the detector 8 of 2 mm square, the signal isthen amplified with the preamplifier 52 and A/D-converted to the digitalimage with the A/D converter 9 and the image processing circuit 10detects the area generating difference as the defect 11 throughcomparison with the digital image of the area intrinsically providingexpectation for matching of images.

[0024] In this case, the spreading by defocusing and movement ofconverging position when the retarding voltage 12 is changed arerespectively adjusted with the converging optical system 51 and E×B 13.Therefore, even when deflection by the deflector 3 is considered, thesecondary electron 7 is spread in maximum up to the area of 1.5 mmsquare+design allowance. Here, the detector 8 is rather small in sizebecause one detector has the size of 2 mm square but since the electronbeam is incident to the detector, the signal of almost all secondaryelectrons 7 can be obtained as an output of the detector 8. When thebandwidth of preamplifier is set to 200 MHz, since the detector has thesize of 2 mm square, cut-off frequency is 300 MHz, A/D converter has 400Msps, the detector, preamplifier and A/D converter are responsible to400 Msps with sufficient consideration for 400 Msps.

[0025] The fifth means for embodying the present invention isillustrated in FIG. 6 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or positioning, an E×B 13for bending the secondary electron 7 from the object substrate 5,detectors 61 a to 61 b in size of 2 mm square provided in a plurality ofpositions for detecting the secondary electron 7 bent with the E×B 13,preamplifiers 62 a to 62 b having the bandwidth of 200 MHz or higherconnected to each detector, a signal combining circuit 63 for adding orswitching outputs of the preamplifiers 62 a to 62 b, an A/D converter 9of 400 Msps for converting the signal combined with the signal combiningcircuit 63 into the digital image and an image processing circuit 10 fordetecting, from the digital image, the area generating difference as thedefect 11 through comparison with the digital image of the areaintrinsically providing expectation for matching of images.

[0026] With introduction of such structure, the sharing range of theretarding voltage 12 of the detector 61 a is defined as Vamin to Vamaxand the sharing range of the retarding voltage 12 of the detector 61 bis defined as Vbmin to Vbmax, the detectors 61 a to 61 b are provided atthe converging distance of the secondary electron 7 corresponding to theretarding voltage 12 of the sharing range with the setting for coveringthe range of all retarding voltages 12 when these are added. When theretarding voltage 12 is in the range of Vamin to Vamax, the detector 61a is selected with the signal combining circuit 63 and E×B 13 is set toapply the electron beam to the detector 61 a.

[0027] The electron beam 2 emitted from the electron beam source 1 isdeflected in the X direction with the deflector 3 to irradiate theobject substrate 5 via the objective lens 4, the secondary electron 7from the object substrate 5 is then bent with the E×B 13 havingoptimized the bending angle while simultaneously moving continuously thestage 6 in the Y direction, thereafter the secondary electron 7 is thendetected with the detector 61 a in the size of 2 mm square and is thenamplified with the preamplifier 62 a, thereafter the signal isA/D-converted to the digital image in the A/D converter 9 because thedetector 61 a is selected in the signal combining circuit and the imageprocessing circuit 10 detects, from the digital image, the areagenerating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation formatching of images.

[0028] In this case, since the spread by defocusing and movement ofconverging position when the regarding voltage 12 is changed areadjusted with selection of the detectors 61 a to 61 b and adjustmentwith E×B 13, the secondary electron 7 can be spread in maximum to thearea of 1.5 mm square+design allowance even when considering thedeflection with the deflector 3. Since one detector of 61 a to 6 b hasthe size of 2 mm square with smaller allowance and the electron beamenters the detector, the signal of almost all secondary electrons 7 canbe obtained as an output of the detectors 61 a to 61 b. When thebandwidth of the preamplifier is set to 200 MHz, since the sensor hasthe size of 2 mm square, cut-off frequency is 300 MHz and A/D converterhas 400 Msps, the detector, preamplifier and A/D converter areresponsible to 400 Msps with sufficient consideration for 400 Msps.

[0029] The sixth means for embodying the present invention isillustrated in FIG. 7 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or positioning, a E×B 13for bending the secondary electron 7 from the object substrate 5, asecondary electron returning deflector 71 for deflecting the secondaryelectron 7 bent with the E×B 13, a detector 72 in size of 2 mm squarefor detecting the secondary electron 7 returned with the returningdeflector 71, a preamplifier 73 having the bandwidth of 200 MHz or moreconnected to the detector 72, an A/D converter 9 of 400 Msps forA/D-converting the output of preamplifier 73 to the digital image and animage processing circuit 10 for detecting, from the digital image, thearea generating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation formatching of images.

[0030] With introduction of the structure explained above, the electronbeam 2 from the electron beam source 1 is deflected in the X directionwith the deflector 3 to irradiate the object substrate 5 via theobjective lens 4, the second electron 7 from the object substrate 5 isbent with the E×B 13 having optimized the bending angle for eachretarding voltage while simultaneously moving the stage 6 continuouslyin the Y direction, thereafter the secondary electron 7 is detected withthe detector 72 in the size of 2 mm square by returning amount ofmovement on the detector 72 at the deflector 3 with the secondaryelectron returning deflector 71 in order to eliminate movement ofsecondary electron 7 and this secondary electron 7 is then amplifiedwith the preamplifier 73, thereafter the signal is A/D-converted to thedigital image with the A/D converter 9 and the image processing circuit10 detects the area generating difference as the defect 11 throughcomparison with the digital image of the area intrinsically providingexpectation for matching of images.

[0031] In this case, movement of converging position when the retardingvoltage 12 is changed is adjusted with the E×B 13. Moreover, since thesecondary electron returning deflector 71 is used for movement of thesecondary electron 7 resulting from the scanning of the deflector 3, thesecondary electron 7 is spread in maximum only up to the area of 2 mmsquare+design allowance. The detector 72 does not have allowance becauseit has the size of 2 mm square, but since the electron beam is incidentto the detector, the signal of the secondary electron 7 can be definedas the output of the detector 72. When the bandwidth of preamplifier isset to 200 MHz, since the detector has the size of 2 mm square, cut-offfrequency is 300 MHz and A/D converter has 400 Msps, the detector,preamplifier and A/D converter are responsive for 400 Msps withsufficient consideration for 400 Msps. This structure cannot achieve thetarget with itself but it is possible to use this structure to attainthe design allowance through combination, for example, with thestructure of the fifth means.

[0032] The seventh means for embodying the present invention isillustrated in FIG. 8 and is composed of an electron beam source 1 forgenerating the electron beam 2, a deflector 3 for deflecting theelectron beam 2, an objective lens 4 for converging the electron beam 2on the object substrate 5, a stage 6 for holding the object substrate 5to apply the retarding voltage 12 for scanning or positioning, a E×B 13for bending the secondary electron 7 from the object substrate 5, areflector 81 for collision with the secondary electron 7 bent with theE×B 13, a converting optical system 83 for converging the secondaryelectron 82 generated with the secondary electron 7 collided with thereflector 81, a detector 84 of 2 mm square for detecting the secondaryelectron 82 converged with the converging optical system 83, apreamplifier 85 having the bandwidth of 200 MHz or higher connected tothe detector 84, an A/D converter 9 of 400 Msps for A/D-convertingoutput of the preamplifier 85 to the digital image and an imageprocessing circuit 10 for detecting, from the digital image, the areagenerating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation formatching of images.

[0033] In the structure of the detector using a plurality of detectors,those having reduced, as much as possible, the non-effective area in theperiphery of the detector is provided adjacently. At least non-effectivearea of 0.2 mm is required when it is reduced as much as possible. Whenthese are allocated without any interval, the detectors maybe allocatedby providing the non-effective area of 0.4 mm. In this method, aplurality of detectors may be integrated at the time of manufacturingthe detector. Although depending on the process, it is possible toprovide the non-effective area of 0.02 mm or less. FIG. 9 illustrates anexample where five detectors 91 a to 91 e are used as the detector.

[0034] With introduction of the structure explained above, the electronbeam 2 from the electron beam source 1 is deflected in the X directionwith the deflector 3 to irradiate the object substrate 5 via theobjective lens 4, the secondary electron 7 from the object substrate 5is bent with the E×B 13 having optimized the bending angle for eachretarding voltage, thereafter the secondary electron 7 is collided withthe reflector 81 and the secondary electron 82 generated at thereflector 81 is then detected with the detector 84 of 2 mm square viathe converging optical system 83, the signal is amplifier with thepreamplifier 85 and is then A/D-converted to the digital image of theA/D converter 9 and the image processing circuit 10 detects the areagenerating difference as the defect 11 through comparison with thedigital image of the area intrinsically providing expectation formatching of images.

[0035] In this case, since the electron beam 7 is once collided with thereflector 81, the secondary electron 82 almost having no energy isgenerated not depending on the retarding voltage 12 and scanning by thedeflector 3 and this secondary electron 82 is inputted to the detector84 with the converging optical system 83. Accordingly, the secondaryelectron 82 is spread in maximum to the area of 2 mm square. Since thedetector 84 has the size of 2 mm square, the signal of all secondaryelectron 7 can be obtained as the output of detector 84. When thebandwidth of a preamplifier is set to 200 MHz, since the detector is inthe size of 2 mm square, cut-off frequency is 300 MHz and A/D converterhas 400 Msps, the detector, preamplifier and A/D converter areresponsible for 400 Msps with sufficient consideration for 400 Msps.

[0036] In the means and operation to solve the problems explained above,the converging position to the detector is adjusted with E×B, but it isalso possible to realize the function to adjust the position ofsecondary electron or the like to the detector by inserting thesecondary electron deflector in the optical path of only the secondaryelectron, in place of allowing both the electron beam and secondaryelectron to pass the circuits other than E×B. Moreover, since a largeaberration is generated if the electron beam is deflected to a largeextent with the E×B, it can be thought to cancel the aberration byadding a dummy E×B for operating in the inverse direction.

[0037] These and other objects, features and advantages of the inventionwill be apparent from the following more particular description ofpreferred embodiments of the invention, as illustrated in theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0038]FIG. 1 is a front elevation illustrating the schematic structureof the pattern inspection apparatus using the electron beam of therelated art.

[0039]FIG. 2 is a front elevation illustrating the schematic structureof the first means of the present invention.

[0040]FIG. 3 is a front elevation illustrating the schematic structureof the second means of the present invention.

[0041]FIG. 4 is a front elevation illustrating the schematic structureof the third means of the present invention.

[0042]FIG. 5 is a front elevation illustrating the schematic structureof the fourth means of the present invention.

[0043]FIG. 6 is a front elevation illustrating the schematic structureof the fifth means of the present invention.

[0044]FIG. 7 is a front elevation illustrating the schematic structureof the sixth means of the present invention.

[0045]FIG. 8 is a front elevation illustrating the schematic structureof the seventh means of the present invention.

[0046]FIG. 9 is a diagram illustrating an example of structure of thedetector in the present invention.

[0047]FIG. 10 is a diagram illustrating an operating method of thesecond means of the present invention.

[0048]FIG. 11 is a plan view of the detector indicating the operation onthe detector of the secondary electron by the secondary electrondeflector.

[0049]FIG. 12 is a front elevation illustrating the schematic structureof the apparatus in relation to the first embodiment.

[0050]FIG. 13 is a plan view of a wafer for explaining the sequence ofinspection.

[0051]FIG. 14 is a plan view of a wafer for explaining the scanningmethod on the wafer.

[0052]FIG. 15 is a front elevation illustrating the schematic structurein relation to the second embodiment of the present invention.

[0053]FIG. 16 is a front elevation illustrating the schematic structureof the apparatus in relation to the third embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0054] The preferred embodiments of the present invention will beexplained below.

[0055] [Embodiment 1]

[0056] The first embodiment of the present invention will be explained.FIG. 12 illustrates a structure of the first embodiment.

[0057] The first embodiment comprises an electron beam source 1 forgenerating the electron beam 2, an electro-optical system 106 consistingof a condenser lens 103 for converging the electron beam 2 from theelectron beam source 1 to the constant area, a blanking plate 104installed near the converging position of the condenser lens 103, adeflector 105 for deflecting the electron beam 2 in the XY directionsand an objective lens 4 for converging the electron beam 2 on the objectsubstrate, a sample chamber 107 for holding a wafer 100 as the objectsubstrate in the evacuated condition, a stage 6 for mounting the wafer100 to apply the retarding voltage 108 to enable detection of an imageat the desired position, a E×B 13 for deflecting the secondary electron7 from the wafer 100 in the direction to the detector 20, a 4-splitdetector 20 using four detecting elements of 2 mm square having thebandwidth of 200 MHz to detect the deflected secondary electron 7,preamplifiers 21 a to 21 d having the bandwidth of 200 MHz allocatedwithin the sample chamber held in the evacuated condition, an A/Dconverter 22 for obtaining the digital image by adding outputs of thepreamplifiers 21 a to 21 d and A/D-conducting the added outputs at 400Msps, a memory 109 for storing the digital image, an image processingcircuit 10 for detecting the area generating difference as the patterndefect 11 through comparison of the digital image stored in the memory109 with the A/D converted digital image, a complete control unit 110(the control line from the complete control unit 110 is omitted), aZ-sensor 113 for keeping constant the focal position of the digitalimage detected by adjusting the focal position of the electron beam 2converged on the object substrate 5 by measuring the height of wafer 100and controlling a current value of the objective lens 4 with addition ofoffset 112, a loader (not illustrated) for loading and unloading thewafer 100 in the cassette 114 to and from the sample chamber 107, anorientation flat detector (not illustrated) for positioning the wafer100 with reference to the external shape of the wafer 100, an opticalmicroscope 118 for observing the pattern on the wafer 100 and a standardsample piece 119 provided on the stage 6.

[0058] The detector 20 described in this embodiment has the samestructure as that described in FIG. 2.

[0059] Operations of the first embodiment will be explained. Thecomplete control unit 110 instructs the operation of each unit in thefollowing procedures. An instruction is issued to a loader (notillustrated) and the loader picks up the wafer 100 from the cassette114, positions the wafer with reference to the external shape with theorientation flat detector (not illustrated), loads the wafer 100 to thestage 6 and evacuates the inside of sample chamber 107. Upon completionof loading, the conditions of the electro-optical system 106 andretarding voltage 108 are set and a voltage is applied to the blankingplate 104 to turn off the electron beam 2.

[0060] Next, the stage is moved to the standard sample piece 119 tovalidate the Z-sensor 113 in order to keep the focal point to theconstant area of the detection value+offset 112 of the Z-sensor, thedeflector 105 is caused to conduct raster-scanning, the voltage of theblanking plate 104 is turned off in synchronization with the scanning,the wafer 100 is irradiated with the electron beam 2 when it isrequired, the secondary electron 7 generated from the wafer 100 isdetected with the 4-split detector 20 and is then amplified with thepreamplifiers 21 a to 21 d, thereafter the secondary electrons 7 areadded and are then A/D-converted to the digital image with the A/Dconverter 22. Here, the offset 112 is changed to detect a plurality ofdigital images and the optimum offset to provide the maximum total sumin the image of the differential values of the images in the completecontrol unit 110 for each detection is set as the current offset value.

[0061] Next, the stage 6 is moved to the scanning start position of thearea to be inspected of the loaded wafer 100. The intrinsic offset ofthe wafer which has been measured previously is added to the offset 112for the setting to validate the Z-sensor 113, the stage 6 is thenscanned in the Y direction along the scanning line 153 illustrated inFIG. 13, the deflector 105 scans in the X direction in synchronizationwith the scanning of stage and the voltage of the blanking plate 104 isturned off at the time of effective scanning so that the electron beam 2irradiates the wafer 100 for the scanning purpose.

[0062] A die 152 on the wafer 100 has the identical wiring patterns inthe unit for producing products which are finally divided. The secondaryelectron 7 generated from the wafer 100 is detected with the 4-splitdetector 20, amplified with the preamplifiers 21 a to 21 d, added andA/D-converted with the A/D converter to obtain the digital image of thestripe area 154. The obtained digital image is stored in the memory 109.Here, after completion of scanning of the stage 6, the Z-sensor 113 isinvalidated. With repetition of the scanning of stage, the entire partof area required is inspected completely. On the occasion of inspectingthe entire part of wafer 100, inspection is performed in the sequenceillustrated in FIG. 14.

[0063] Here, the 4-split detector 20 has the structure and functionidentical to that of FIG. 2.

[0064] In the case where the A detecting position 155 is detected withthe image processing circuit 10, the detecting position is compared withthe image of the B detecting position 156 stored in the memory 109 andthe area generating the difference is extracted as a defect 11, a listof the pattern defect 11 is generated and is then transmitted to thecomplete control unit 110.

[0065] According to this embodiment, the entire part of the wafer isinspected using the SEM image to detect only the pattern defect 11 andthese defects can be presented to users.

[0066] According to this embodiment, since the 4-split detector 20 of200 MHz is used, the total and sufficient area and high-speedcharacteristic can be obtained, high-speed characteristic can be assuredthrough amplification in which the respective bandwidths are maintainedin the preamplifiers 21 a to 21 d. Moreover, the signals are added andA/D-converted and thereby the S/N ratio can be doubled in comparisonwith that of only one detector.

[0067] Next, the first modification example of the present embodimentwill be explained. In this first modification example, a smart detectorwhich integrates the 4-split sensor 20, preamplifiers 21 a to 21 d andthe circuit for adding outputs of the preamplifiers are integrated asillustrated in FIG. 4. According to this modification example, since thesensor and preamplifiers are integrated and only one output can beobtained on the occasion of realizing high-speed operation of 400 Mspsor more, it is possible to easily increase the number of divisions.

[0068] Next, the second modification example of the present embodimentwill be explained. In this modification example, a smart detectorintegrating the 4-split sensor 20 and preamplifiers 21 a to 21 d is used(not illustrated). Namely, in this modification example, a circuit foraddition is separated from the smart detector of the first modificationexample as illustrated in FIG. 4 and the 4-split detector 20 and thepreamplifiers 21 a to 21 d are integrated in the structures illustratedin FIG. 2 and FIG. 12. According to this modification example, since thesensor and preamplifiers are integrated to realize the high-speedoperation of 400 Msps or more, the number of divisions can easily beincreased. Moreover, since outputs of the preamplifiers are individuallyprovided, it can easily be realized to provide the arithmetic functionsin addition to the addition.

[0069] Next, the third modification example of the present embodimentwill be explained. In the structure illustrated in FIG. 12, thismodification example uses a smart detector integrating the 4-splitsensor 20, preamplifiers 21 a to 21 d, an arithmetic circuit having oneor a plurality of outputs and an A/D converter for A/D-converting theoutput of one or a plurality of arithmetic circuits. According to thismodification example, since the sensor and preamplifier are integratedfor high-speed operation of 400 Msps or more, the number of divisionsmay be increased easily.

[0070] Next, the fourth modification example of the present embodimentwill be explained. In this modification example, the sequence ofaddition and A/D conversion are replaced with each other for the firstmodification example. Namely, outputs of the preamplifiers 21 a to 21 dare once A/D-converted and these outputs are added or arithmeticallyoperated after the A/D conversion. According to this modificationexample, the characteristics of the 4-split detector 20 andpreamplifiers 21 a to 21 d can be compensated with the arithmeticoperations.

[0071] The first embodiment and its modification examples have beenexplained above but in this embodiment and its modification examples,not only the outputs of the 4-split detector 20 are simply added butalso the linear or non-linear arithmetic processes maybe executed forthe outputs of respective detection elements.

[0072] Moreover, the light detecting surface of each element hasdifferent angles for observing the objects because the 4-split detector20 which has been explained in the embodiment and its modificationexample is used. Therefore, the shape information including theprojection and recess information of the object can be obtained at highspeed by conducting the arithmetic operations for these outputs.

[0073] In addition, in the embodiment and its modification examples, the4-split detector 20 is used as an example but the detector providing theother light detecting surface at the center area as illustrated in FIG.9 can also be used.

[0074] According to this embodiment and its modification examples, it isalso possible, without requesting remarkable modification in comparisonwith that in the related art, to detect the SEM image in the samplingfrequency which is higher by two times or more than that of theapparatus of related art in the rather simplified structure of theoptical system.

[0075] Moreover, according to the present embodiment and itsmodification examples, since the beam diameter of secondary electron canbe detected in the same diameter as that of the apparatus of relatedart, a degree of contamination of the detector surface is same as thatin the related art and therefore there is no disadvantage that theoperating life of the detector can be shortened due to the high-speeddetection.

[0076] In addition, according to the present embodiment and itsmodification examples, since the signals are processed by simultaneouslyreceiving the outputs from the respective divided detectors, if there isfluctuation of sensitivity in the respective divided detectors, theoutputs depending on such fluctuation can be obtained stably and suchoutput signals can be processed rather easily.

[0077] [Embodiment 2]

[0078] The second embodiment of the present invention will be explained.FIG. 15 illustrates a structure of the second embodiment, comprising anelectron beam source 1 for generating the electron beam 2, anelectro-optical system 106 consisting of a condenser lens 103 forconverging the electron beam 2 from the electron beam source 1 to theconstant area, a blanking plate 104 provided at the area near theconverging position of the condenser lens 103 to control the on/offcondition of the electron beam 2, a deflector 105 for deflecting theelectron beam 2 in the XY directions and an objective lens 4 forconverging the electron beam 2 on the object substrate 5, a samplechamber 107 for holding the wafer 100 as the object substrate under theevacuated condition, a stage 6 to load the wafer 100 for applying theretarding voltage 108 which enables the detection of an image of thedesired position, a secondary electron deflector 30 for deflecting thesecondary electron 7 from the object substrate 5, 4-split detectors 31 ato 31 d using four detection elements in the size of 2 mm square havingthe bandwidth of 50 MHz for detecting the secondary electron 7 deflectedwith the secondary electron deflector 30 from the object substrate 5,preamplifiers 32 a to 32 d having the bandwidth of 50 MHz, A/Dconverters 33 a to 33 d for obtaining the digital image by the A/Dconversion of the outputs from the preamplifiers 32 a to 32 d, a bitcompensation table 130 for compensating the characteristics of thedetectors and preamplifiers provided for the A/D converters 33 a to 33d, a memory 109 for storing the compensated digital images, an imageprocessing circuit 10 for comparing the image stored in the memory 109and the digital image after the A/D conversion and detecting the areagenerating difference as the pattern defect 11, a complete control unit110 (the control line from the complete control unit 110 is omitted inthe figure), a Z-sensor 113 for keeping constant the focal position ofthe digital image detected by measuring the height of wafer 100 andcontrolling the current value of objective lens 4 with addition of theoffset 112, a loader (not illustrated) for loading and unloading thewafer 100 in the cassette 114 into and from the sample chamber 107, anorientation flat detector (not illustrated) for positioning the wafer100 with reference to the external shape of the wafer 100, an opticalmicroscope 118 for observing the patterns on the wafer 100 and astandard sample piece 119 provided on the stage 6.

[0079] Operations of the second embodiment will be explained. First, thebit compensation table is preset with the system explained later. Thecomplete control unit 110 instructs the operations to each unit in thefollowing sequence. When an instruction is issued to the loader (notillustrated), the loader picks up the wafer 100 from the cassette 114,positions the wafer 100 with reference to the external shape with theorientation flat detector (not illustrated), loads the wafer 100 to thestage 6 and evacuates the inside of sample chamber 107. Upon completionof the loading, of wafer, the conditions of electro-optical system 106and retarding voltage 108 are set and a voltage is applied to theblanking plate 104 to turn off the electron beam 2.

[0080] Next, the stage is moved to the standard sample piece 119, theZ-sensor 113 is validated to keep the focal point to the constant valueof the detection value of the Z-sensor+offset 112, the deflector 105 iscaused to conduct the raster scanning and the voltage of the blankingplate 104 is turned OFF in synchronization with the scanning, the wafer100 is irradiated only when it is required with the electron beam 2 andthe secondary electron 7 generated from the wafer 100 in the secondaryelectron deflector 30 is inputted to the 4-split detectors 31 a to 31 dthrough the sequential switching in the form of a ring. The detectedsignal is converted to the digital image with the respectivepreamplifiers 32 a to 32 d and A/D converters 33 a to 33 d. Here, theoffset 112 is changed to detect a plurality of digital images and theoptimum offset which provides the maximum total sum of the images ofdifferentiation value in the complete control unit 110 is set as thecurrent offset value for each detection.

[0081] Next, the stage 6 is moved to the scanning start position of thearea to be inspected of the loaded wafer 100. The intrinsic offset ofwafer previously measured is added to the offset 112 and the addedoffset value is set to validate the Z-sensor 113, the stage 6 is scannedin the Y direction along the scanning line 153 in FIG. 13, the deflector105 is scanned in the X direction in synchronization of scanning ofstage, the voltage of the blanking plate 104 is turned off during thevalid scanning and thereby the wafer 100 is irradiated and scanned withthe electron beam 2. In regard to the secondary electron 7 generatedfrom the wafer 100, the reflected electron or secondary electrongenerated from the wafer 100 with the secondary electron deflector 30 isinputted to the 4-split detectors 31 a to 31 d through the sequentialswitching with the circle scanning 92 shown in FIG. 11.

[0082] The detected signal is respectively converted to the digitalimages of the stripe area 154 with the preamplifiers 32 a to 32 d andA/D converters 33 a to 33 d and these digital images are stored in thememory 109.

[0083] After the completion of scanning of the stage 6, the Z-sensor 113is invalidated. With repetition of the stage scanning, the entiresurface of necessary area is inspected. In the case of inspecting theentire surface of wafer 100, inspection is performed in the sequenceillustrated in FIG. 14. When the A detecting position 155 is detectedwith the image processing circuit 10, the area generating differencethrough comparison with the image of the B detecting position 156 storedin the memory 109 is detected as a pattern defect 11, a list of thepattern defect 11 is generated and it is then transmitted to thecomplete control unit 110.

[0084] Operations of the secondary electron deflector 30, 4-splitdetectors 31 a to 31 d, preamplifiers 32 a to 32 d and A/D converters 33a to 33 d will be explained in detail. FIG. 10 illustrates the timingchart. In the secondary detectors 31 a to 31 d, preamplifiers 32 a to 32d and A/D converters 33 a to 33 d, the sampling is conducted at 100 Mspsto obtain the digital image. The digital image data corresponding to 400Msps can be attained by arranging sequentially the digital imagesobtained.

[0085] The 4-split detectors 31 a to 31 d explained here have the samestructure as that of detectors explained in FIG. 3.

[0086] The bit compensation table 130 outputs, for each A/D converter 33a to 33 d, the value after compensation fa(x) to fd(x) for the outputvalue x of the A/D conversion. The reference A/D converter is defined as33 a and fa(x) is defined as x (fa(x)=x). Next, the shape of functionsof fb(x) to fd(x) is adjusted so that the value after detection andcompensation of the blank wafer composed of various materials becomeidentical.

[0087] According to this embodiment, the entire surface of wafer isinspected using the SEM image and only the pattern defect 11 is detectedand these defects are presented to users.

[0088] A modification example of this embodiment will be explained.

[0089] In the first modification example, as the scanning method of thesecondary electron deflector 30, the switching scanning 93 is used inplace of the circle scanning 92 among the scanning method illustrated inFIG. 11. This modification example as a characteristic that since thescanning of secondary electron on the 4-split detectors 31 a to 31 d isnot the analogous scanning, the scanning is resistive to fluctuationfactor such as drift of position on the 4-split detectors 31 a to 31 dof the secondary electron 7.

[0090] In the second modification example, a circuit for lineararithmetic operation is provided in place of the bit compensation table130 to compensate for the characteristics of the detector andpreamplifier. According to this modification example, there is providedthe characteristic that high-speed processing can be realized with amore simplified circuit.

[0091] According to the second embodiment and its modification example,since the detection rate of N times the operation rate of individualdetectors can be realized, the higher-speed detection can also berealized.

[0092] [Embodiment 3]

[0093] The third embodiment of the present invention is explained. FIG.16 illustrates a structure of the third embodiment, comprising anelectron beam source 1 for generating the electron beam 2, anelectro-optical system 106 consisting of a condenser lens 103 forconverging the electron beam 2 from the electron beam source 1 to theconstant area, a blanking plate 104 provided at the area near theconverging position of the condenser lens 103 for controlling the on/offcondition of the electron beam 2, a deflector 105 for deflecting theelectron beam 2 in the XY direction and an objective lens 4 convergingthe electron beam 2 on the object substrate 5, a sample chamber 107 forholding a wafer 100 as the object substrate in the evacuated condition,a stage 6 for loading the wafer 100 to apply the retarding voltage 108to enable detection of the image at the desired position, E×B 13 fordeflecting the secondary electron 7 from the object substrate 5 towardthe detector 8, a converging optical system 51 for converging thedeflected secondary electron 7, a detector 8 having the bandwidth of 200MHz for detecting the secondary electron 7 converted with the convergingoptical system, a preamplifier 52 having the bandwidth of 200 MHzallocated in the sample chamber held in the evacuated condition, an A/Dconverter 22 for obtaining the digital image from the output of thepreamplifier 52 through the A/D conversion at 400 Msps, a memory 109 forstoring the digital images, an image processing circuit 10 for comparingthe image stored in the memory 109 and the digital image obtainedthrough the A/D conversion to detect the area generating difference asthe pattern defect 11, a complete control unit 110 (the control linefrom the complete control unit 110 is omitted in the figure), a Z-sensor113 for keeping constant the focal position of digital image bymeasuring the height of the wafer 100 and controlling a current value ofthe objective lens 4 with addition of offset 112, a loader (notillustrated) for loading and unloading the wafer 100 in the cassette 114to and from the sample chamber 107, an orientation flat detector (notillustrated) for positioning the wafer 100 with reference to theexternal shape of the wafer 100, an optical microscope 118 for observingthe patterns on the wafer 100 and a standard sample piece 119 providedon the stage 6.

[0094] Here, the detector 8 has the structure identical to thatillustrated in FIG. 5.

[0095] Operations of the third embodiment will be explained. Thecomplete control unit 110 instructs the operation of each unit in thefollowing procedures. When the instruction is issued to the loader (notillustrated), the loader picks up the wafer 100 from the cassette 114,positions the wafer with reference to the external shape with theorientation flat detector (not illustrated), loads the wafer 100 to thestage 6 and evacuates the sample chamber 107. Upon loading of the wafer100, the electro-optical system 106, retarding voltage 108 andconditions depending on the retarding voltage 108 are set to theconverging optical system 51 and a voltage is applied to the blankingplate 104 to cut off the electron beam 2.

[0096] Next, the stage is moved to the standard sample piece 119 andmakes valid the Z-sensor 113 to keep the focal point to the constantvalue of the detection value of Z-sensor 113+offset 112, the deflector105 is caused to execute the raster scanning, the voltage of theblanking plate 104 is cut off in synchronization with the scanning, thewafer 100 is irradiated with the electron beam 2 only when it isrequired, the secondary electron 7 generated from the wafer 100 at thistime is detected with the detector 8 via the converging optical system51 and this secondary electron 7 is converted to the digital image withthe A/D converter 22. The offset 112 is changed to detect a plurality ofdigital images and the optimum offset which provides the maximum sum ofimages of the differentiation value of the image in the complete controlunit 110 for each detection is set as the current offset value.

[0097] Next, the stage 6 is moved to the scanning start position of thearea to be inspected of the wafer 100 loaded. The intrinsic offset ofwafer previously measured is added to the offset 112 for the setting,the Z-sensor 113 is validated, the stage 6 is scanned in the Y directionalong the scanning line 153 of FIG. 13, the deflector 105 is scanned inthe X direction in synchronization of the scanning of stage, the voltageof the blanking plate 104 is cut out during effective scanning and thewafer 100 is irradiated and scanned with the electron beam 2. The die152 on the wafer 100 is finally separated and has the identical wiringpatterns in the units of products. The secondary electron 7 generatedfrom the wafer 100 is detected with the detector 8 and amplified withthe preamplifier 52. Thereafter, the digital image of the stripe area154 is obtained with the A/D converter 22 and is then stored in thememory 109. After the scanning of the stage 6, the Z-sensor 113 isinvalidated. With repetition of the scanning of stage, the necessaryinspection for the entire part of area is conducted. In the case ofinspecting the entire part of the wafer 100, inspection is conducted inthe sequence illustrated in FIG. 14.

[0098] When the image processing circuit 10 detects the A detectingposition 155, this image is compared with the image of the B detectingposition 156 stored in the memory 109 and the area generating differenceis extracted as the defect 11, a list of the pattern defects 11 isgenerated and it is then transmitted to the complete control unit 110.

[0099] According to this embodiment, the entire part of wafer isinspected using the SEM image, only the pattern defect 11 is detectedand it is then presented to a user.

[0100] Moreover, according to this embodiment, the converging positionof the secondary electron 7 depending on the retarding voltage 108 isadjusted with the converging optical system 51 and the detector 8 of 200Msps is used, high speed operation can be assured and all secondaryelectron or the like can be converged to the detector 8.

[0101] Moreover, according to this embodiment, since detection isconducted with only one detector, fluctuation of detection signal issmall and the signal can be detected stably. Thereby, the signalprocessing circuit can be formed in the rather simplified structure.

[0102] Next, a modification example of the present embodiment will beexplained.

[0103] In the first modification example, a plurality of detectors 61 a,61 b are allocated at the positions depending on the retarding voltage108 as illustrated in FIG. 6 and these are used through the switching inplace of that change of the converging position of the secondaryelectron 7 depending on t he retarding voltage 108 is adjusted using theconverging optical system 51 of FIG. 5 or FIG. 16 and it is thenincident to the detector 8. This modification example is characterizedin that appropriate measure can be assured even in the case where thedetectors 61 a, 61 b must be allocated at the distant area because ofthe spatial limitation.

[0104] Next, in the second modification example, the converging opticalsystem 51 of FIG. 5 or FIG. 16 is replaced with a returning deflector 71as illustrated in FIG. 7. This modification example is characterized inthat more stable secondary electron 7 can be converged to the detector 8because displacement of secondary electron 7 due to the influence ofdeflector 105 can be compensated.

[0105] Next, in the third modification example, the reflector 81 isadded as illustrated in FIG. 8, the secondary electron 7 is collidedwith this reflector 81 and the secondary electron 82 generated in thiscase is then converged to the detector 8 with the converging opticalsystem 51. According to this modification example, the secondaryelectron 7 can be detected effectively by stably converging it to thedetector 8.

[0106] As explained above, according to the present invention, it ispossible that the digital images can be detected with the samplingfrequency of 200 Msps or higher and the SEM image can be processed atthe high-speed.

[0107] In addition, in the case where the entire part of the wafer indiameter of 200 mm is inspected at the speed of 100 Msps in the pixelunit of 0.1 μm using the technique of the related art, about 15 hourshave been required. However, when the wafer is detected in the rate of400 Msps in the system of the present invention, such detection can bedone with only about five hours even if the moving time of stage andscanning time of electron beam are included. Moreover, when the wafer isdetected at the rate of 200 Msps in the system of the present invention,such inspection can be made with only about 8 hours.

[0108] Thereby, the result of inspection can be reflected quickly on themanufacturing process.

[0109] Moreover, the apparatus of the present invention realizes thatthe wafers of three times can be inspected with the same inspection timein comparison with the existing apparatus.

[0110] The invention may be embodied in other specific forms withoutdeparting from the spirit or essential characteristics thereof. Thepresent embodiment is therefor to be considered in all respects asillustrative and not restrictive, the scope of the invention beingindicated by the appended claims rather than by the foregoingdescription and all changes which come within the meaning and range ofequivalency of the claims are therefore intended to be embraced therein.

What is claimed is:
 1. A pattern inspecting method comprising the stepsof: irradiating an object substrate having formed patterns with chargedparticles; detecting sequentially, on the time division basis, any ofthe secondary electron, reflected electron and transparent electrongenerated from said object substrate with said irradiation using aplurality of sensors; obtaining digital images at the rate higher thanthat obtained with a plurality of said sensors or with a discrete sensorforming the divided sensors by the time-series processing of the signalobtained through the detection on a time division basis; and detecting adefect of the patterns formed on said object substrate using the digitalimages obtained.
 2. A pattern inspection method as claimed in claim 1,wherein the signal obtained through the detection on a time divisionbasis is time-series processed after A/D-converted.
 3. A patterninspection method as claimed in claim 1, wherein the signal obtainedthrough the detection on a time division basis is time-series processedand thereafter is A/D-converted.
 4. A pattern inspection method asclaimed in claim 1, wherein the signals sequentially detected on a timedivision basis with a plurality of said sensors are integrated in timeseries with an analog switch and such analog signals integrated in itstime series are analogously processed.
 5. A pattern inspection method asclaimed in claim 1, wherein a plurality of said sensors are dividedsensors obtained by dividing one sensor into a plurality of dividedsensors.
 6. A pattern inspection method comprising the steps of:irradiating an object substrate having formed patterns with chargedparticles; detecting sequentially, using a plurality of sensors, thesecondary charged particles generated from said object substrate withsaid irradiation; obtaining the digital images at the rate higher thanthat for obtaining the images with individual sensors forming aplurality of said sensors by integrating, with the time-series process,the signals obtained by sequential detection using a plurality of saidsensors; and detecting a defect of said patterns using the digitalimages obtained.
 7. A pattern inspection method as claimed in claim 6,wherein the signal obtained with said sequential detection is processedon a time-series basis after it is A/D-converted.
 8. A patterninspection method as claimed in claim 6, wherein the signal obtainedwith the sequential detection is then converted with the A/D conversionafter it is processed on a time-series basis.
 9. A pattern inspectionmethod as claimed in claim 6, wherein the signals sequentially detectedwith a plurality of said sensors are integrated in time series with ananalog switch and the analog signal obtained by times series integrationis processed.
 10. A pattern inspection method as claimed in claim 6,wherein a plurality of said sensors are divided sensors obtained bydividing one sensor into a plurality of sensors.
 11. A patterninspection method comprising the steps of: irradiating an objectsubstrate having formed patterns with charged particles; detectingsequentially any of the secondary electron, reflected electron andtransparent electron generated with a plurality of sensors; obtainingdigital images at the rate of 200 Msps or higher through arithmeticoperation of the signals detected sequentially with a plurality of thesensors; and detecting a defect by inspecting said patterns using thedigital images obtained.
 12. A pattern inspection method as claimed inclaim 11, wherein the signals obtained with said sequential detectionare A/D-converted and integrated thereafter on a time series basis andthe signals integrated on the times series basis are then processedthrough the arithmetic operation.
 13. A pattern inspection method asclaimed in claim 11, wherein the signals obtained through sequentialdetection are integrated on a time series basis and the integratedsignals are A/D-converted into the digital images.
 14. A patterninspection method as claimed in claim 11, wherein a plurality of saidsensors are divided sensors obtained by dividing one sensor into aplurality of sensors.
 15. A pattern inspection method comprising thesteps of: irradiating an object substrate having formed patterns withcharged particles; detecting, on a time division basis, any of thesecondary electron, reflected electron and transparent electrongenerated from said object substrate with irradiation of said chargedparticles with a plurality of sensors in a sampling frequency of 150Msps or less; obtaining the digital images of 200 Msps or higher byintegrating the signals detected on a time division basis with aplurality of sensors; and inspecting said patterns using the digitalimages obtained.
 16. A pattern inspection method as claimed in claim 15,wherein the signals detected on a time division basis are A/D-convertedand are then integrated on a time series basis.
 17. A pattern inspectionmethod as claimed in claim 15, wherein the signals detected on a timedivision basis are integrated in time series and the signals integratedin the time series are A/D-converted to obtain the digital images.
 18. Apattern inspection method as claimed in claim 15, wherein a plurality ofsaid sensors are divided sensors obtained by dividing one sensor into aplurality of sensors.
 19. A pattern inspection apparatus comprising: acharged particle irradiating device for irradiating an object substratehaving formed patterns with charged particles; a detector forsequentially detecting, on a time division basis, using a plurality ofsensors, the secondary charged particles generated from said objectsubstrate through irradiation of charged particles with said chargedparticle irradiating device; an image obtaining device for obtainingdigital images at the rate which is higher than that attained with aplurality of said sensors or a discrete sensor forming the dividedsensors by the time series process for the signal obtained by detectionon a time division basis with said detector; and a defect detector fordetecting a defect of patterns formed on said object substrate using thedigital images obtained by said image obtaining device.
 20. A patterninspection apparatus as claimed in claim 19, wherein said imageobtaining device processes on a time series basis the signals obtainedby detection on a time division basis with said detector after the A/Dconversion.
 21. A pattern inspection apparatus as claimed in claim 19,wherein said image obtaining device executes the A/D conversion, afterthe time series process, for the signals detected and obtained on a timedivision basis with said detector.
 22. A pattern inspection apparatus asclaimed in claim 19, wherein said image obtaining device integrates on atime series basis the signals sequentially detected on a time divisionbasis with a plurality of sensors of said detector using an analogswitch and then processes the analog signals integrated on a time seriesbasis.
 23. A pattern inspection apparatus as claimed in claim 19,wherein a plurality of sensors of said detector are divided sensorsobtained by dividing one sensor into a plurality of sensors.
 24. Apattern inspection apparatus as claimed in claim 19, wherein said imageobtaining device is provided with a sensitivity compensating unit forcompensating fluctuation of sensitivity of a plurality of sensors ofsaid detector.
 25. A pattern inspection apparatus comprising: a chargedparticle irradiating device for irradiating an object substrate havingformed patterns with the charged particles; a detector for detecting ona time division basis the secondary charged particles generated fromsaid object substrate through irradiation of charged particles with saidcharged particle irradiating device with a plurality of said sensorsusing a plurality of sensors having the sampling frequency of 150 Mspsor lower; an image obtaining device for obtaining the digital images atthe rate of 200 Msps or higher by integrating the signals detected on atime division basis with a plurality of sensors of said detector; and adefect detector for detecting a defect of patterns using the digitalimages obtained by said image obtaining device.
 26. A pattern inspectionapparatus as claimed in claim 25, wherein said image obtaining deviceintegrates on a times series basis, after the A/D conversion, thesignals detected and obtained on a time division basis with saiddetector.
 27. A pattern inspection apparatus as claimed in claim 25,wherein said image obtaining device integrates on a time series basisthe signals detected and obtained through the time division with saiddetector and A/D-converts the signal integrated on a time division basisto obtain digital images.
 28. A pattern inspection apparatus as claimedin claim 25, wherein a plurality of said sensors of said detector aredivided sensors obtained by dividing one sensor into a plurality ofsensors.